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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550 FEATURES TRANSISTOR PNP (c) TO 92 1.EMITTER Power dissipation PCM : 0.625 W Tamb=25ae(c) Collector current ICM : -1 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO ICEO 2. BASE 3. COLLECTOR 123 unless otherwise specified(c) MIN -40 -25 -6 -0.1 -0.1 45 85 40 -0.5 -1.2 150 V V MHz 300 MAX UNIT V V V |I A |I A Test conditions Ic= -100|I IE=0 A IC= -0.1mA , IB=0 IE= -100|I AIC=0 VCB= -35V , IE=0 VCE= -20V , IB=0 VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC= -800mA, IB=-80mA IC=-800mA, IB=-80m A VCE=-6V, IC= -20mA f=30MHz hFE(1) DC current gain hFE(2) hFE(c) 3 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT * Pulse Test pulse width U300s duty cycle U 2% |
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